Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L256M64D2LZ-107 WT:B | Dynamic random access memory | DEX
Micron Technology DRAM SDRAM-DDR3L, Part #: MT52L256M64D2LZ-107 WT:B | Dynamic random access memory | DEX
-70% Off$8.09
Description
Micron Technology DRAM , Part #: MT52L256M64D2LZ-107 WT:B features: • Ultra-low-voltage core and I/O power supplies • Frequency range – 933–10 MHz (data rate range: 1866–20 Mb/s/pin) • 8n prefetch DDR architecture • 8 internal banks for concurrent operation • Multiplexed, double data rate, command/address inputs; commands entered on each CK_t/CK_c edge • Bidirectional/differential data strobe per byte of data (DQS_t/DQS_c) • Programmable READ and WRITE latencies (RL/WL) • Burst length: 8 • Per-bank refresh for concurrent operation • Temperature-compensated self refresh (TCSR) • Partial-array self refresh (PASR) • Deep power-down mode (DPD) • Selectable output drive strength (DS) • Clock-stop capability • On-die termination (ODT) • RoHS-compliant, “green” packaging
MIL:MT52L256M64D2LZ-107 WT B
MT52L256M64D2LZ-107 WT:B
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